Abstract
Two-dimensional (2D) semiconductors have been attracting considerable interests for the potential applications in nano-optoelectronic devices. Here, we study the electronic and optical properties of the ZrS2/HfSe2 van der Waals (vdW) heterobilayer, which presents an intrinsic type-II band alignment. The conduction band minimum (CBM) and the valence band maximum (VBM) are separately dominated by the ZrS2 and HfSe2 layers, respectively. More importantly, the superior optical absorption of the heterostructure can be reached to the 106 amounts in ultraviolet region. Our results suggest that the 2D ZrS2/HfSe2 vdW heterobilayer would be likely utilized in the optoelectronic devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.