Electronic and optical properties of semiconductors quantum wells

Abstract

In this contribution we review some basic concepts concerning the optical properties near fundamental band gap of low dimensional structures. We shall discuss the electronic and optical properties of semiconductor quantum wells. Such structures are the object of intensive studies since many years, and a good understanding of most of its basic properties is nowadays achieved [1–3]. Various effects linked to the quantum confined motion of the carriers through the different semiconductor layers have been experimentally observed and theoretically interpreted. Various theoretical models have been used for the study of the electronic states of such crystaline heterostructures (for a review see for instance ref.[4]). In this work we shall consider the envelope function approximation. This formalism is characterized by its simplicity and flexibility, and has proven to give a coherent explanation for the effects we discuss in the following.