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Abstract
We have calculated the band structure and dielectric function of InP by means of an accurate first-principles method using the full potential linear muffin-tin orbital method (FPLMTO). Our calculated dielectric functions is compared with the recent data of Herzinger et al. [ J. Appl. Phys., 77, 1995, 1715]. The calculated dielectric function is in good agreement with the recent data. The calculated band gap is smaller by about 0.7 eV in comparison with experimental gap.
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