Abstract
AbstractThe electronic and optical properties of GaInZnO (GIZO) thin films grown on SiO2/Si by r.f. magnetron sputtering were obtained by means of XPS and reflection electron energy loss spectroscopy (REELS). The optical properties represented by the dielectric function ε, refractive index n, extinction coefficient k and transmission coefficient T of GIZO thin films were obtained from a quantitative analysis of the REELS spectra. When the concentration ratios of Ga:In:Zn in GIZO thin films are 1:1:1, 2:2:1, 3:2:1 and 4:2:1, the bandgap values are 3.2, 3.2, 3.4 and 3.6 eV, respectively. The optical properties were determined from the energy loss of the REELS spectra by using quantitative analysis of electron energy loss spectra (QUEELS)‐ε(k, ω)‐REELS software. The optical properties depend on the Ga concentration, and the transmission in the visible region improved with increasing Ga concentration in GIZO. Copyright © 2010 John Wiley & Sons, Ltd.
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