Electronic and optical properties of Ge doped graphene and BN monolayers

Abstract

The effect of germanium doping on the properties of hexagonal boron nitride and graphene monolayers was investigated using ab initio calculations. For boron nitride, the obtained results indicate the formation of electronic states in the region of the gap, near the Fermi level. The incorporation of such impurity atoms also induces an apparent decrease in the energy gap and a significant reduction in the optical conductivity. The calculations indicate small absorbance for wavelengths from infrared to visible light. For the graphene layer, it has been obtained a null gap semi-metal material. This result can be associated with the corresponding displacement of the Fermi level. In addition, the germanium doped graphene shows similar optical properties when compared with the pristine layer.