Electronic and Optical Properties of GaAs Bilayer

Abstract

In the present work, we have systematically studied structural, electronic and optical properties of buckled GaAs bilayer with and without spin‐orbit coupling by density functional theory. Buckled GaAs bilayer have direct band gap of 0.70 eV at high symmetric Г‐point which is low as compare to GaAs monolayer. Optical properties such as real and imaginary part of dielectric functions, refractive index, extinction coefficient, absorption spectrum and reflectivity are well studied using density function theory. The calculated optical properties show that the buckled GaAs bilayer can be beneficial for optoelectronic and light emitting devices.