Abstract
Electronic states in the conduction band of (AlAs)M(AlxGa1−x As)N(110) superlattices are investigated for various M and N. It is shown that electronic properties of these structures are mainly determined by electrons of two pairs of valleys, namely, either Γ-X Z or X X –X Y . Calculations based on the developed model of joining the envelope functions were carried out. Miniband spectra, symmetry, and localization of wave functions, as well as probabilities of miniband-to-miniband infrared absorption, are determined and analyzed. It is shown that, in the case of the X X –X Y pair of valleys, the absorption probabilities are high not only for polarization of light along the growth axis of the superlattice but also for the normal incidence of an optical wave on the structure surface.
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