Electronic and optical properties of 530 nm strain-compensated hybrid InGaN/InGaN/ZnO quantum well light-emitting diodes

Abstract

Electronic and optical properties of 530 nm strain-compensated hybrid InGaN/InGaN/ZnO quantum well (QW) light-emitting diodes (LEDs) using a ZnO substrate are investigated using the multiband effective mass theory. These results are compared to those of conventional InGaN/GaN QW LEDs using a GaN substrate. A strain-compensated QW structure is found to have much larger spontaneous emission than an InGaN/GaN QW structure. This can be explained by the fact that a strain-compensated QW structure has much larger matrix element than an InGaN/GaN QW structure due to the reduction in the internal field.