Electronic and optical effects of boron doping by plasma assisted diffusion in a-SiC : H

Abstract

Hydrogenated amorphous SiC films have been p-type doped in an alternative process which is based upon plasma enhanced boron diffusion (PAD) from thin SiB layers on the substrate into the growing intrinsic film. In contrast to B 2H 6 doped films showing perceptible departures of optical properties in comparison to undoped a-SiC : H for PAD doping band gap, refractive index, Penn gap, and Urbach energy remain unchanged. The shift of Fermi level towards the valence band turns out to be comparable to gas phase doping.