Electronic and Magnetic Properties of the BaTiO$$_{3}$$/LaMnO$$_{3}$$ Interface: a DFT Study

Abstract

The electronic and magnetic properties of the BaTiO $$_{3}$$ /LaMnO $$_{3}$$ interface were investigated by means of ab initio calculations within the density functional theory (DFT). An impact of the thickness of the ferroelectric overlayer on the interface properties was analysed through the spin-polarized density of states. It was been shown that the band gap decreases with increasing the thickness of ferroelectric overlayer, approaching zero.