Electronic and Magnetic Properties of Ga1-x M x A (M = Mn and Cr; A = As and N): Ab Initio Study

Abstract

The both electronic and magnetic properties of Ga 1-x Mn x As, Ga 1-x Mn x N, and Ga 1-x Cr x N have been studied using the Korringa–Kohn–Rostoker (KKR) method combined with the coherent potential approximation (CPA). The total and local density of state (DOS) of Ga 1-x M x A (M = Mn and Cr; A = As and N) material are established. The total magnetic moment and the gap energies deduced for different values of dilution x in third systems are obtained.