Abstract
AbstractThe II‐IV‐N2 semiconductors constitute a family of heterovalent ternary semiconductors with properties closely related to those of the III‐Nitrides. We here focus on Zn‐IV‐N2 semiconductors with the group IV‐element Si, Ge and Sn. We present results on their electronic band structures obtained with the quasiparticle self‐consistent GW method and the full‐potential linearized muffin‐tin orbital method.The latter is also used to calculate the energies of formation of these compounds from the constituent elements. The lattice dynamical properties were presented earlier in a series of papers and the main properties are briefly reviewed here. We emphasize the trends in the family of materials compared to those of the III‐N and discuss the experimental data for the phonons. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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