Electronic and impurity states in a three-dimensional corner under an applied electric field

Abstract

We study the electronic and impurity states in a three-dimensional corner under an applied electric field. It is found that the electronic states in the corner are discrete in all three directions, similar to the electronic state behaviour in a quantum dot, and the eigenenergies of the discrete electronic levels increase with the electric field strength. The impurity states in the three-dimensional corner have similar features as those in the quantum dots, and their maximum binding energy increases, but the impurity position corresponding to the peak binding energy moves towards the corner, as the electric field strength increases. The results also show that the binding energy of the ground impurity state at the corner point in the absence of electric field is equal to that of the fourth impurity excited state in the bulk.