Electronic and electrical properties of silicon nanowire-single wall carbon nanotube junction as a nanoelectronic switch

Abstract

In this work, we performed first principles calculations based on self-consistent charge density functional tight-binding to investigate how the overlapping length of two inter-shell structure effect on the electronic and electrical properties of silicon nanowire-single wall carbon nanotube junction. By computing of density of state, current–voltage curve, conductance and transmission probability, it is found that the binding energy, charge transferring between two structures and conductance changes with the overlapping length. Our results show that charge transferring between the two structures is not affected by overlapping length. Also, we found that the current increases by increasing the overlapping length. At finally, the conductance increase from the zero to the high amount of overlapping length as an off and on states of a nanometer switch.