Abstract
A numerical model is developed to describe the electron–hole pair (EHP) creation energy in amorphous selenium (a-Se) for high energy photon excitation by solving the three dimensional coupled continuity equations of electrons and holes considering carrier drift, diffusion and bimolecular recombination between non-geminate electrons and holes. The numerical model is fitted with the published experimental results on widely varying X-ray energy, electric field and temperature. The model shows a good agreement. The results of this paper indicate that the columnar recombination model is capable of describing the electric field, temperature, and photon energy dependent EHP creation energy in a-Se for high energy photons.
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More From: Journal of Materials Science: Materials in Electronics
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