Abstract
AbstractAt sufficiently high pumping levels, carrier densities of more than 2 × 1017 cm−3 can be produced in doped Ge or small crystals of intrinsic Ge. As a result, the crystal can be entirely filled with a degenerate electron–hole plasma. With increasing temperature this system does not undergo a phase transition to a low density free exciton gas, even at temperatures above the critical point.
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