Abstract
The photoluminescence spectrum of phosphorus-doped silicon has been studied as a function of impurity concentration 9.0 × 1015 cm−3 ≤ ND ≤ 4.3 × 1019 cm−3 and temperature 1.9 K ≤ T ≤ 145 K. The spectra at low temperature [Formula: see text] are interpreted in terms of a condensed phase of carriers (electron–hole droplet) over the entire range of concentrations studied.
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