Abstract
The transient behavior of the electron beam induced current (EBIC) in MOS and MNOS capacitors was studied for various Si-oxide and Si-nitride preparation and annealing conditions and interpretations of the corresponding SEM-EBIC micrographs are given. Due to the higher radiation hardness of MNOS structures as revealed by HF and quasistatic CV data, appropriate defect imaging without beam artifacts is far more easily achieved in MNOS than in MOS devices, particularly at higher magnifications. The useful application of MNOS structures for defect characterization by EBIC imaging and generation lifetime is demonstrated.
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