Abstract
Electron beam (EB)-induced HCl pattern etching of GaAs is achieved without any masks on the surface. This pattern etching is performed under the irradiation of both EB with small spot size and HCl gas which is supplied from a small nozzle located above the water surface. This pattern etching is based on two points: the etch rate of GaAs by HCl exposure is negligibly small below about 250 degrees C, and the etch rate is enhanced by the simultaneous irradiation of EB. The etch rate increases with decreasing wafer temperature in a range from 70 to 150 degrees C. This phenomenon is considered to be due to the change of the sticking coefficient of the HCl molecule on GaAs surface.
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