Abstract
Distribution functions are calculated for photoexcited electrons in GaAs, under conditions of continuous, monochromatic excitation. The lattice temperature is taken to be 1.2 K and the excitation intensity such that the density of photoexcited carriers is insufficient for the distribution to be affected by intercarrier scattering. A Boltzmann equation approach is used to take account of the effects of, injection of electrons into the conduction band, at an energy below the threshold for longitudinal optical phonon emission, scattering by acoustic phonons, via the deformation potential and piezoelectric interactions, and recombination. The equation is solved numerically using an iterative technique and the distribution functions are found to differ significantly from a Maxwellian form. Emission spectra due to conduction band to neutral acceptor transitions are derived from the computed distribution functions and are compared with recent experimental results.
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