Abstract
We have studied the variation with bias (to ± 150 mV) of the I, dV/dI, and d2I/dV2 of p-type GaAs point contacts on Pb single crystals at liquid-He temperatures. The results are examined and are compared with those obtained from p-type GaAs–Pb film tunnel junctions fabricated by conventional techniques. A small reduction of the energy gap and a shift in bias energy of the phonon-induced structure in the superconducting Pb tunneling characteristics have been observed, and we suggest these are due to pressure at the point contact. The effects of this pressure on the p-type GaAs tunneling characteristics are also observed and some qualitative explanations are suggested.
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