Abstract
We theoretically investigate the transport in a magnetic/normal/magetic hybrid structure on the surface of a Weyl semimetal. We find a directional-dependent tunneling which is sensitive to the magnetic field configuration and the electric gate voltage. The momentum filtering behavior becomes more significant for two-delta-function-shaped magnetic barriers. There are many Fabry-Pérot resonances in the transmission determined by the distance between the two magnetic barriers. The combined effects of the magnetic field and the electrostatic potential can enhance the difference in the transmission between the parallel and antiparallel magnetization configurations, and consequently lead to a giant magnetoresistance.
Highlights
Topological Weyl semimetals have sparked tremendous recent interest in condensed matter physics[1,2]
We study electron tunneling through two types of magnetic double barriers where we considered square-shaped and delta-function-shaped magnetic fields
The upper limit of the magnetic barrier strength induced by a uniform magnetic field on superconductor pattern is restricted by the critical magnetization of the superconductor material, which is in excess of 30 T, as shown in Nb3Sn24
Summary
Topological Weyl semimetals have sparked tremendous recent interest in condensed matter physics[1,2] These materials host low energy excitations with massless, linear dispersions around nodes, termed the Weyl points, as the three-dimensional (3D) analogue of graphene. Due to the high mobility and chiral nature of electrons in Weyl semimetals, they are expected to be ideal candidates for transport and tunneling applications Several transport applications such as charge transport[18,19], magnetotransport[20,21], extremely large magnetoresistance and ultrahigh mobility[22] have been predicted and observed recently. We find that the transmission of electrons through the double barrier structures depends sensitively on the incident angles, the Fermi energy, the magnetic fields, and the electric gate voltages.
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