Abstract
Detailed tunneling measurements on thin-film planar tunnel junctions of the type RE/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7//native oxide/Pb (RE=Y, Eu, or Gd) are reported. The films were sputter deposited and chemically etched prior to the growth of the native oxide. The structural content of the gaplike structure in the I-V characteristic was investigated by taking dI/dV and d/sup 3/I/dV/sup 3/ traces. By analysis of the temperature dependence and temperature smearing, strong arguments could be provided for the fact that all the structures between +or-50 mV measured at low temperature are due to density of states effects. On junctions prepared on 1-2-3 films with T/sub c/ depressed either by partial oxygen depletion or by alloying, it is found that the gaplike structure was weakened, but did not shift on the energy scale.
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