Abstract
A single layer of nc-Si dots with 10 nm in diameter embedded in a-SiO2 matrix is formed by the plasma enhanced chemical vapor deposition in a high hydrogen diluted silane plasma and followed by thermal annealing treatment. Based on this structure, an a-SiO2/nc-Si/a-SiO2 double barrier diode is fabricate. The transport characteristics of this diode exhibit a series of reproducible conductance peaks at room temperature. An equivalent circuit method is introduced to determine the real voltage spacing between adjacent conductance peaks. The results are in good agreement with the calculated values based on the Coulomb blockade effect.
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