Abstract
Photo-injection was used to study the charge trapping properties of high-temperature oxidation (HITOX) SIMOX buried oxides (BOX), provided by two independent vendors. After electron injection, from a 5 eV mercury light source, the electron trapping per area for both HITOX material sources was found to be larger than their respective standard (control) separation by implantation of oxygen (SIMOX) structures. This increase has been attributed to the HITOX's process influence on the formation of the HITOX/BOX oxide.
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