Electron traps in B +-implanted SiO 2

Abstract

Implantation of B + ions in SiO 2 films leads to formation of deep and shallow electron traps related to O-deficiency of the oxide. Nature and density of the defects are determined by the chemistry of the oxide and by implantation damage. Most likely they contain trivalent Si or small Si clusters. The centers disappear upon a brief O 2 anneal.