Abstract
We report on the electron trapping mechanism in a multi-level organic field effect transistor (OFET) memory using Lithium-ion-encapsulated fullerene (Li+@C60) as the floating gate. Based on the estimation of trapped electron number per each Li+@C60 molecule when a programming voltage was applied, the active domain of the floating gate was determined to be the surface of the Li+@C60 domain. An analysis of the cyclic voltammetry indicated that each Li+@C60 molecule can trap electrons at the trapping energy level of -4.94 and -4.49 eV. The number of trapped electron was confirmed by the ultraviolet-visible spectroscopy (UV-Vis).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
