Abstract
Electron trapping in thin anodized layers on GaAs and InP at 77 K was studied using the flat band voltage shift method. Compared with the trap characteristics at room temperature, the capture cross section and density were increased. The trap sites with very small capture cross section at room temperature were not detected at 77 K. A few trap sites were detected at 77 K which possibly act as shallow levels at room temperature. For both GaAs and InP diodes, trap characteristics were found to be a function of the processing conditions.
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