Abstract
The isochronal anneal of phosphorus in neutron transmutation doped silicon has been studied with electron paramagnetic resonance. It was found that the fraction of phosphorus atoms occupying a substitutional lattice site increases almost linearly in the range of anneal temperatures from 250 to 700 °C. Recovery of the Fermi level to the normal n-type position is observed to occur between 500 and 700 °C. It is proposed that phosphorus atoms are constitutent parts of the electron trapping centers, capable of trapping two electrons.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
