Abstract
The electronic transport characteristics of silicene sheets are studied by an Ensemble Monte Carlo (EMC) technique in the presence of phonon (acoustic, non-polar optic, surface polar optic), surface roughness and ionized impurity scattering mechanisms. Both intrinsic and silicene on an Al2O3 substrate are considered. Screening is also considered for both ionized impurity and surface polar optic phonon scattering of electrons. The velocity-applied field characteristics are obtained for both cases. A negative differential resistance (NDR) behaviour is observed for intrinsic case only. The mobility of carriers are calculated as a function of temperature for both cases and the results are compatible with existing experimental results and theoretical predictions. The effects of screening and flexural phonons on mobility are also studied.
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