Abstract
(GeTe)x(AgSbTe2)1−x(x=80, 85) compounds were fabricated by melting-hot press and RSP-hot press processes. The (GeTe)85(AgSbTe2)15 compound, which composed of mainly crystalline and partly amorphous structures, was produced in part by rapid solidification. X-ray diffraction analysis showed that the (GeTe)x(AgSbTe2)1−x compounds represented a single phase of GeTe. The electron transport properties were evaluated over the temperature range of RT∼773K, and then systematically changed with compositions x in (GeTe)x(AgSbTe2)1−x compounds. The maximum Seebeck coefficient was 227 μV/K at 673K in the (GeTe)80(AgSbTe2)20 compounds fabricated by melting and hot-press process. The minimum resistivity was shown in the (GeTe)85(AgSbTe2)15 by melting and hot-press process.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
