Electron transport properties and free electron density evolution during the phase change in VO2 thin films

Abstract

The experimental results on the phase change behavior of vanadium dioxide (VO2) as a function of temperature are invariably examined in the light of the strong electron correlation-based Mott-Hubbard model or the periodic lattice distortion based Peierls model with limited success. Further, the experimental conditions-based nanostructure imparted to the VO2 thin films also plays an important role. Hence, it has been suggested that the theoretical model that best suits the experimental conditions needs to be applied. In this work, we have examined the electron transport properties of VO2 thin films of various thicknesses all along the reversible phase change cycle. These results have led us to carefully examine the free electron density (ne) evolution all along the phase transition cycle and to establish for the first time the reversible hysteresis cycles of this important parameter. The intimate correlation between the degree of change in ne and the resistance seen in our samples leads us to believe that our results may be in favor of the Mott-Hubbard model of phase transition.