Abstract
The direct large-bandgap semiconductors like GaN are ideally suited for use in both electronic and optoelectronic devices as well as for combined applications. The desire to improve device performance has fuelled theoretical and experimental investigation of the optical and transport properties of these materials. This chapter presents a theoretical analytical study of transport phenomena in bulk GaN as well as in GaN-based quantum wells under nonequilibrium conditions. It considers the cases of both low and high electron densities. The chapter presents a simple, rigorous analytical theory of nonequilibrium electrons in bulk GaN and GaN-based quantum wells. An accurate model of electron transport in semiconductor heterostructures based on wide-bandgap nitride materials requires an adequate identification of all the essential features that influence the quantum and statistical properties of the electron gas and the interaction of the electrons with scatterers.
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