Abstract

The semiconductor alloy InAlAs is commonly found in many types of heterojunction solar cells, particularly in hot carrier solar cells. Yet, surprisingly little is known about its transport properties. Here, we theoretically determine both its low field and high field electron transport properties, with focus on the alloy In065Al0.35As that is tensilely strained to the InAs lattice constant, a value consistent with its use in many hot carrier solar cells.

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