Abstract
The electron transport properties in quantum wires are investigated in the ballistic region and the hot-electron region by solving the Boltzmann equations. In the ballistic region, the effect of the scattering due to the surface roughness of a quantum wire on the conductance quantization is studied, and it is made clear how the scattering at the surface roughness destroys the conductance quantization. In the hot-electron region it is shown that the optical-phonon scattering plays an important role in the electron transport, and two types of transport take place as a result. One is electron confinement in a energy region below the optical-phonon energy and the other is electron velocity runaway. With these characteristics the possibility of a velocity modulation field effect transistor is suggested. Finally, a quantum wire resonant tunnelling transistor which works as a kind of multichannel rotational switch is proposed. As an application of this transistor, a switch for a superconducting interconnection network on which signals can propagate without attenuation and distortion is proposed to reduce the number of interconnection lines and also to simplify the circuit configuration.
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