Abstract
Low field and high field DC conductivity measurements have been made on macroporous p-type porous silicon (PS) samples prepared by anodic dissolution. The conduction mechanism is found to be due to Variable Range Hopping near the Fermi level for temperatures below 150 K. At high temperatures the conduction is due to the tunneling of carriers in the localized states in the band edges near the valence band. The analysis of the data shows that PS presents a fractal structure between 1D and 2D systems.
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