Abstract
AbstractThe electron mobility in N‐polar heterostructures was measured as a function of gate bias using resistance and capacitance measurements on gated transmission line method structures. The mobility was observed to decrease as the gate was reverse biased. Experimental results also revealed that the access resistance of the device increased with increasing reverse bias of the gate. Theoretical scattering rates caused by phonon, alloy disorder and ionized impurity scattering were calculated as a function of gate bias and found to match the experimental data well. An electrostatic model was developed to calculate the sheet charge density of the devices, and they were found to be independent of the polarization of the barrier layer. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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