Abstract
The paper provides an overview on the current understanding of electron transport in wurtzite indium nitride (InN). First, recent findings concerning the bandgap of InN are reviewed and their consequences on electron transport are discussed. Then, applying the ensemble Monte Carlo method and new band structure data from the literature, the electron transport in InN is investigated in detail. We calculate a peak steady-state drift velocity of more than 5times107 cm/s at an electric field of 32 kV/cm, a pronounced transient velocity overshoot, and a remarkably high low-field mobility of 14000 cm2/Vs for undoped InN. The features of the electron transport in InN are compared to those in other semiconductors and the prospects of InN-based highspeed transistors are addressed
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