Electron transport in highly compensated, undeformedn-type InSb in the temperature range 4.2—300 K

Abstract

Measurements of Hall coefficient, dc conductivity, and magnetoresistances have been made on highly compensated, undeformed $n$-type InSb samples from liquid helium to room temperature. The measurements show that the extent of the impurity-band conduction depends considerably on the compensation ratio and the effective concentration of the carriers. Two activation energies have been identified in the impurity-conduction region. The magnetoresistance at 4.2 K is due to impurity-band conduction and is found to be positive. It shows approximately a square-law dependence on a magnetic field. The observed behavior of magnetoresistance at 300 and 77.4 K is consistent with the behavior expected for free electrons. The variation of $\frac{\ensuremath{\Delta}\ensuremath{\rho}}{\ensuremath{\rho}}$ with temperature in the range 4.2\char22{}300 K at 0.3 kG is essentially governed by the variation of ${\ensuremath{\mu}}_{H}$ in the same temperature range.