Abstract
The conductivity and Hall effect have been measured in HgSe:Fe, Ga samples with various iron and gallium contents in the temperature range from 1.5 to 300 K. It is shown that the formation of states with mixed valence at the Fermi level leads to three new effects of electron scattering by the impurities in HgSe:Fe, Ga crystals. Randomly distributed Ga ions can both strengthen and weaken the scattering of electrons by spatially correlated ions, depending on the ratio of and concentrations. We have analysed in detail and confirmed experimentally an inverse effect: the presence of states with mixed valence in a system of iron ions results in both spatial correlation of and ions and suppression of electron scattering by the disordered set of Ga ions. We have also analysed the effects of mutual influence of mechanisms of electron scattering by two types of charged donors and , resulting in the violation of Matthiessen's rule. We have suggested a method allowing one to calculate correctly the electron momentum relaxation rate and kinetic characteristics of strongly correlated impurity systems.
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