Abstract
Resistivity and Hall effect measurements on n-type undoped Ga-richInxGa1−xN (0.06⩽x⩽0.135) alloys grown bymetal-organic vapour phase epitaxy (MOVPE) technique are carried out asa function of temperature (15–350 K). Within the experimental error,the electron concentration in InxGa1−xNalloys is independent of temperature while the resistivity decreases asthe temperature increases. Therefore, InxGa1−xN (0.06⩽x⩽0.135) alloys are considered in the metallic phase near theMott transition. It has been shown that the temperature-dependentmetallic conductivity can be well explained by the Mott model thattakes into account electron–electron interactions and weak localizationeffects.
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