Abstract
The drift mobility of electron charge carriers in oxygen non-stoichiometric manganite CaMnO3−δ was cal- culated by combining the total electrical conductivity and oxygen non-stoichiometry data at 700-950 °С and oxygen partial pressure varying between 10 −6 and 1 atm. The carrier concentration changes with pressure and temperature were obtained with the help of the earlier-developed defect model involving reactions of oxygen exchange and thermal exci- tation of manganese sites. The activation energy for mobil- ity is found to increase with oxygen non-stoichiometry. High-temperature electron transport properties of the man- ganite CaMnO3−δ can be explained in terms of activated jumps of n-type small polarons in adiabatic regime. The relatively small mobility of charge carriers is explained by strong localization of polarons on manganese sites.
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