Electron transport in bulk n-doped 3C-SiC by using a non-equilibrium quantum kinetic theory

Abstract

In this paper we present a study on the charge transport in bulk n-type doped semiconductor 3C-SiC (in both, transient and steady state) using a non-equilibrium quantum kinetic theory derived from the method of nonequilibrium statistical operator (NSO), which furnishes a clear description of the irreversible phenomena that occur in the evolution of the analyzed system. We obtain theoretically the dependence on the applied electric field of the basic macrovariables: the “electron drift velocity” and the “non-equilibrium temperature”. The “peak points” in time evolution of this macrovariables are derived and analyzed.