Abstract
We present theoretical results on the steady state characteristics of bulk GaAs1–xNx using the single electron Monte-Carlo method (x ≤ 0.4%). Two equivalent models are used. The first includes a GaAs band with a strong localized nitrogen resonance. The second model uses the band anti-crossing model, in which the localized N level interacts with the GaAs band strongly perturbing the conduction band. We obtain two negative differential velocity peaks from the first model which we associate with N scattering and polar optical phonon emission (POPem). From the second model only one peak is obtained associated with POPem. The first model gives very good agreement with experimental low field mobility. We use this model to include additional scattering resonances related with the pair and larger cluster nitrogen states. Further reduction of the mobility and convergence towards the experimental values is observed.
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