Abstract
The electrical conductivity of amorphous silicon- and oxygen-containing W-, Nb-, and Cr-carbon nanocomposite films is studied. It is revealed that, at a metal concentration of 10–40 at. % and in the temperature range 80–400 K, the electrical conductivity of the films is a power function of temperature. In terms of inelastic electron tunneling, the average number of localized states in the intercluster potential barriers is calculated as a function of the metal concentration.
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