Abstract
Investigations of the electron transport in Si(100) high-mobility inversion layers were carried out up to extreme carrier concentrations Ns approximately=1.5*1017 m-2. The authors are able to verify the existence of the population of a second subband in the Shubnikov-de Haas oscillation spectra of the longitudinal resistance Rxx directly for the first time. The mobilities in the subbands are obtained by combination of conductivity and Hall effect measurements using the concentrations determined in the Shubnikov-de Haas effect. According to the results the second occupied subband is identified as the lowest of the fourfold degenerate ladder.
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