Abstract
Quasi-one dimensional electron systems have been created using a suspended helium film on a structured substrate. The electron mobility along the channel is calculated by taking into account the essential scattering processes of electrons by helium atoms in the vapor phase, ripplons, and surface defects of the film substrate. It is shown that the last scattering mechanism may dominate the electron mobility in the low temperature limit changing drastically the temperature dependence of the mobility in comparison with that controlled by the electron-ripplon scattering.
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