Abstract
We have performed transport measurements on a gallium phosphide antimonide (GaPSb) film grown on GaAs. At low temperatures (T), transport is governed by three-dimensional Mott variable range hopping (VRH) due to strong localization. Therefore, electron–electron interactions are not significant in GaPSb. With increasing T, the coexistence of VRH conduction and the activated behavior with a gap of 20 meV is found. The fact that the measured gap is comparable to the thermal broadening at room temperature (approximately 25 meV) demonstrates that electrons can be thermally activated in an intrinsic GaPSb film. Moreover, the observed carrier density dependence on temperature also supports the coexistence of VRH and the activated behavior. It is shown that the carriers are delocalized either with increasing temperature or magnetic field in GaPSb. Our new experimental results provide important information regarding GaPSb which may well lay the foundation for possible GaPSb-based device applications such as in high-electron-mobility transistor and heterojunction bipolar transistors.
Highlights
III-V-based alloys and heterostructures have been attracting much interest because of their great device applications as well as their fundamental importance
The epitaxial growth of these systems was not achieved until the first growth of GaAs-GaSb was done in 1979 by carrying out the growth under a highsupersaturation condition, such as molecular beam epitaxy (MBE) [4]
We have performed extensive transport measurements on a GaPSb film grown by MOCVD
Summary
III-V-based alloys and heterostructures have been attracting much interest because of their great device applications as well as their fundamental importance. The suppression of density of states near the Fermi energy would lead to p = 1/2 for both 2D and 3D systems, known as Efros-Shklovskii VRH Another important phenomenon in the strong localization regime is referred to as negative magnetoresistance (NMR) which results from the suppression of quantum interference between forward scattering hopping paths as the magnetic field (B) is applied [8,9,10,11]. Rxx 1⁄4 RaexpðEa=kBT Þ ð2Þ with Boltzmann constant (kB), activation energy (Ea), and a prefactor (Ra) Such a crossover from VRH conduction to an activation one with increasing T has already been observed in Si delta-doped GaAs grown by MBE [13]. Our new experimental results provide important information for possible device applications as well as modeling using the GaPSb-based materials
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