Electron transport characteristics of FeGa, Ni/n-Si junctions by impedance spectroscopy

Abstract

In this work, we have investigated electron transport across Galfenol (Fe x Ga 1-x ) and Nickel-based Schottky contacts deposited onto n-Si substrates using conventional DC current-voltage (I–V) measurements and have uniquely studied the effects of improper back contact causing additional bias dependent Resistance-capacitance (R–C) components using AC Impedance spectroscopy by choosing proper equivalent circuit models. Junction barrier height and ideality factor were obtained from DC current-voltage characteristics, and bias dependent impedance measurements have been carried out. From Impedance spectroscopy analysis the magnitudes of depletion layer capacitance and barrier height have been calculated and have been compared for both the junctions, and the effect of additional components has been distinguished. Negative capacitance behaviour at lower frequencies and higher forward bias regime has been observed, which might be attributed to interface states in presence of injected charge carriers and by choosing an equivalent circuit having inductor-resistor (R-L) type relaxation, better fit of experimental Nyquist plots of FeGa Schottky junction have been achieved. • FeGa and Nickel based Schottky Junctions have been deposited onto n-Si substrates using RF magnetron Sputtering. • Junction parameters have been calculated using conventional DC and, AC Impedance measurements. • Using equivalent circuit; bias dependency of both Schottky and Ohmic interfaces for has been studied.