Electron transport and energy-band structure of InSb

Abstract

Various n-InSb crystals, pure and Te doped, were prepared using the horizontal zone-refining technique. The electrical conductivity and Hall coefficient of these samples were measured as functions of temperature from 90 to 470 K. By self-consistently fitting the theoretical transport parameters to the experimental data, a set of parameters was refined and/or determined. They include the optical band-gap variation E0(T) = [0.235 − 3.2× 10−4T2/(220 + T)] eV, the heavy-hole effective mass m*hh = (0.20 ± 0.02)me, and the acoustic deformation potential Ed = (13 ± 1) eV. Various scattering mechanisms and impurity phenomena are also discussed.